Datasheet Analog Devices HMC609-SX — Ficha de datos

HMC609
v03.0210 GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 -4 GHz AMPLIFIERS -LOW NOISE -CHIP 1 Typical Applications Features The HMC609 is ideal for: Excellent Gain Flatness: ±0.2 dB • Fixed Microwave High Gain: 20.5 dB • Point-to-Multi-Point Radios Low Noise Figure: 3 dB • Test & Measurement Equipment Output IP3: +36 dBm • Radar & Sensors Output P1dB: +22 dBm • Military & Space 50 Ohm Matched Input/Output
Die Size: 2.1 x 1.3 x 0.1 mm Functional Diagram General Description
The HMC609 is a GaAs PHEMT MMIC Low Noise
Amplifier (LNA) chip which operates from 2 to 4 GHz.
The HMC609 features extremely flat performance
characteristics including 20 dB of small signal gain,
3.0 dB of noise figure and output IP3 of +36 dBm
across the operating band. This versatile LNA is ideal
for hybrid and MCM assemblies due to its compact
size, consistent output power and DC blocked RF I/
O’s. All data is measured with the chip in a 50 Ohm test
fixture connected via two 0.025 mm (1 mil) diameter
bondwires of minimal length 0.31 mm (12 mil). Electrical Specifi cations, TA = +25° C, Vdd1 = Vdd2 = +6V, Idd1 + Idd2 = 170 mA *
Parameter Min. Frequency Range
Gain Typ. Max. 2-4
19 Gain Variation Over Temperature Units
GHz 20.5 dB 0.005 0.01
4 dB/ °C Noise Figure 3 Input Return Loss 20 dB Output Return Loss 17 dB 21 dBm
dBm Output Power for 1 dB
Compression (P1dB) 18 Saturated Output Power (Psat) 22 Output Third Order Intercept (IP3) 36 Supply Current (Idd1 + Idd2) 170 dB dBm
220 mA *Adjust Vgg1 = Vgg2 between -1.5V to -0.5V (typ. -0.9V) to achieve total drain bias of 170mA 1 -108 Information furnished by Analog Devices is believed to be accurate and reliable. However, no …