Datasheet Analog Devices HMC-ABH241-DIE — Ficha de datos

HMC-ABH241
v03.0412 Linear & Power Amplifiers -CHIP GaAs HEMT MMIC MEDIUM POWER
Amplifier, 50 -66 GHz
Typical Applications Features This HMC-ABH241 is ideal for: Output IP3: +25 dBm • Short Haul / High Capacity Links P1dB: +17 dBm • Wireless LAN Bridges Gain: 24 dB • Military & Space Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 3.2 x 1.42 x 0.1 mm Functional Diagram General Description
The HMC-ABH241 is a four stage GaAs HEMT MMIC
Medium Power Amplifier which operates between
50 and 66 GHz. The HMC-ABH241 provides 24 dB
of gain, and an output power of +17 dBm at 1dB
compression from a +5V supply voltage. All bond pads
and the die backside are Ti/Au metallized and the
amplifier device is fully passivated for reliable operation.
The HMC-ABH241 GaAs HEMT MMIC Medium
Power Amplifier is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wire bonding, making it ideal for MCM and
hybrid microcircuit applications. All data shown herein
is measured with the chip in a 50 Ohm environment
and contacted with RF probes. Electrical Specifications, TA = +25° C,
Vdd1= Vdd2= Vdd3= 5V, Idd1 + Idd2 + Idd3= 220mA [2]
Parameter Min. Frequency Range Typ. Max. Units 50 -66 GHz 24 dB Input Return Loss 15 dB Output Return Loss 15 dB Output Power for 1 dB Compression (P1dB) 17 dBm Output Third Order Intercept (IP3) 25 dBm Saturated Output Power (Psat) 19 dBm 220 mA Gain 19 Supply Current (Idd1 + Idd2 + Idd3)
[1] Unless otherwise indicated, all measurements are from probed die …