FDC6312P
Dual P-Channel 1.8V PowerTrench Specified MOSFET
General Description Features These P-Channel 1.8V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance. • –2.3 A, –20 V. RDS(ON) = 115 mΩ @ VGS = –4.5 V
RDS(ON) = 155 mΩ @ VGS = –2.5 V
RDS(ON) = 225 mΩ @ VGS = –1.8 V
• High performance trench technology for extremely
low RDS(ON) Applications
• Power management • SuperSOTTM-6 package: small footprint (72%
smaller than standard SO-8); low profile (1mm thick) • Load switch D2
S1
D1 G2 SuperSOT TM -6 S2 3 5 2 6 1 G1 Absolute Maximum Ratings
Symbol 4 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current –2.3 A – Continuous (Note 1a) – Pulsed –7 Power Dissipation for Single Operation PD (Note 1a) 0.96 (Note 1b) 0.9 (Note 1c) TJ, TSTG W 0.7
-55 to +150 °C (Note 1a) 130 °C/W (Note 1) 60 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity .312 FDC6312P 13’’ 12mm 3000 units 2001 Fairchild Semiconductor Corporation FDC6312P Rev C (W) FDC6312P January 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS
∆TJ
IDSS Breakdown Voltage Temperature
Coefficient …