Datasheet Fujitsu MB85RS4MTYPN-G-AWEWE1 — Ficha de datos

FUJITSU SEMICONDUCTOR
MEMORY SOLUTION DATA SHEET DS501-00065-0v1-E Memory FRAM 4M (512 K  8) Bit SPI MB85RS4MTY DESCRIPTION
MB85RS4MTY is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288
words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming
the nonvolatile memory cells. This product is targeted for high-temperature environment applications.
MB85RS4MTY adopts the Serial Peripheral Interface (SPI).
The MB85RS4MTY is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS4MTY can be used for 1013 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
As MB85RS4MTY does not need any waiting time in writing process, the write cycle time of MB85RS4MTY
is much shorter than that of Flash memories or E2PROM. FEATURES
• Bit configuration
• Serial Sector Region • Unique ID
• Serial Number • Serial Peripheral Interface
• Operating frequency
• High endurance
• Data retention : 524,288 words  8 bits
: 256 words  8 bits
In this region, data storage after (by) three times reflow based on
JEDEC MSL-3 standard condition is guaranteed.
: 64 bits
In this region, data storage after (by) three times reflow based on
JEDEC MSL-3 standard condition is guaranteed. …