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30 V, N-channel Trench MOSFET
Extracto del documento
PMV20EN 30 V, N-channel Trench MOSFET
5 July 2018 Product data sheet 1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
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• Logic level compatible
Very fast switching
Trench MOSFET technology
Enhanced power dissipation capability of 1200 mW 3. Applications
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• Relay driver
High-speed line driver
Low-side load switch
Switching circuits 4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C -30 V VGS gate-source voltage -20 -20 V ID drain current -7.6 A -17 21 mΩ VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics
RDSon
[1] drain-source on-state
resistance VGS = 10 V; ID = 6 A; Tj = 25 °C 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . PMV20EN Nexperia 30 V, N-channel Trench MOSFET 5. Pinning information …
