Datasheet ON Semiconductor JAN2N3019S — Ficha de datos

2N3019, 2N3019S, 2N3700
Low Power Transistors
NPN Silicon
Features • MIL−PRF−19500/391 Qualified
• Available as JAN, JANTX, and JANTXV http://onsemi.com
COLLECTOR
3 MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic Symbol Value Unit Collector −Emitter Voltage VCEO 80 Vdc Collector −Base Voltage VCBO 140 Vdc Emitter −Base Voltage VEBO 7.0 Vdc Collector Current − Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C
2N3019, 2N3019S
2N3700 PT Total Device Dissipation @ TC = 25°C
2N3019, 2N3019S
2N3700 PT Operating and Storage Junction
Temperature Range TJ, Tstg Symbol Thermal Resistance, Junction to Ambient
2N3019, 2N3019S
2N3700 RqJA Thermal Resistance, Junction to Case
2N3019, 2N3019S
2N3700 RqJC 1
EMITTER mW 800
500 W 5.0
1.0
−65 to
+200 °C Max Unit THERMAL CHARACTERISTICS
Characteristic 2 …