Datasheet Analog Devices HMC636ST89ETR — Ficha de datos

HMC636ST89 / 636ST89E
v02.0311 Typical Applications Features The HMC636ST89(E) is ideal for: Low Noise Figure: 2.2 dB • Cellular / PCS / 3G High P1dB Output Power: +22 dBm • WiMAX, WiBro, & Fixed Wireless High Output IP3: +40 dBm • CATV & Cable Modem Gain: 13 dB 9 • Microwave Radio 50 Ohm I/O’s -No External Matching Amplifiers -Linear & Power -SMT GaAs pHEMT High Linearity
Gain Block, 0.2 -4.0 GHz Functional Diagram Industry Standard SOT89 Package General Description
The HMC636ST89(E) is a GaAs pHEMT, High
Linearity, Low Noise, Wideband Gain Block Amplifier
covering 0.2 to 4.0 GHz. Packaged in an industry
standard SOT89, the amplifier can be used as either
a cascadable 50 Ohm gain stage, a PA Pre-Driver, a
Low Noise Amplifier, or a Gain Block with up to +23
dBm output power. This versatile Gain Block Amplifier
is powered from a single +5V supply and requires no
external matching components The internally matched
topology makes this amplifier compatible with virtually
any PCB material or thickness. Electrical Specifications, Vs= 5.0 V, TA = +25° C
Parameter Min Frequency Range
Gain Typ. Max Min. 0.2 -2.0
10 Gain Variation Over Temperature
Input Return Loss Max. 2.0 -4.0 13
0.01 Typ. 5
0.02 10 GHz 10
0.01 Units dB
0.02 dB/ °C 10 dB Output Return Loss 13 15 dB Reverse Isolation 22 20 dB Output Power for 1 dB Compression (P1dB) 19 22 20 23 dBm Output Third Order Intercept (IP3) 36 39 36 39 dBm Noise Figure 2.5 2 Supply Current (Icq) 155 155 dB
175 mA Note: Data taken with broadband bias tee on device output. 9-1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no …