IRF9383MPbF
DirectFETВ® P-Channel Power MOSFET В‚
Typical values (unless otherwise specified) Applications VDSS l Isolation Switch for Input Power or Battery Application
l High Side Switch for Inverter Applications VGS RDS(on) RDS(on) -30V max В±20V max 2.3mО©@-10V 3.8mО©@-4.5V Features and Benefits Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 67nC 29nC 9.4nC 315nC 59nC -1.8V l Environmentaly Friendly Product
l RoHs Compliant Containing no Lead, no Bromide and no Halogen S l Common-Drain P-Channel MOSFETs Provides D High Level of Integration and Very Low RDS(on) G
S D DirectFETВ™ ISOMETRIC MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)ВЃ
SQ SX ST MQ MX MT MP MC Description
The IRF9383MTRPbF combines the latest HEXFET В® P-Channel Power MOSFET Silicon technology with the advanced DirectFET В®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFETВ®
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFETВ®
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. Orderable part number Package Type IRF9383MTRPbF DirectFET Medium Can IRF9383MTR1PbF Standard Pack
Form Quantity В® Tape and Reel 4800 В® Tape and Reel 1000 DirectFET Medium Can Note "TR1" suffix EOL notice #264 Absolute Maximum Ratings Max. Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V VGS
ID @ TA = 25В°C
ID @ TA = 70В°C
ID @ TC = 25В°C
IDM Pulsed Drain Current g e …
