AONX38168
25V Dual Asymmetric N-Channel XSPairFETв„ў General Description Product Summary Bottom Source Technology Very Low RDS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Applications VDS Q1
25V Q2
25V ID (at VGS=10V) 62A 85A RDS(ON) (at VGS=10V) < 3.3mΩ < 0.8mΩ RDS(ON) (at VGS=4.5V) < 5mΩ < 1.05mΩ 100% UIS Tested
100% Rg Tested DC/DC Converters in Computing, Servers, and POL Non-Isolated DC/DC Converters in Telecom and Industrial DFN 5X6E D2/S1 Bottom View Top View Bottom View Top View
G2 8 G1 1
PIN1 S1/D2 2 S2
D1 G1
S1/D2 D1 4 Q2 S2 7 G2 8 1 G1 D2/S1 7 2 S1/D2 G2
D2/S1 S2 D1 6 D2/S1 D2/S1 6 3 D1 5 D2/S1 D2/S1 5 4 D1 D1 D1 PIN1 D1 3 Q1 Orderable Part Number Package Type Form Minimum Order Quantity AONX38168 DFN 5x6E Tape & Reel 3000 Absolute Maximum Ratings TA=25В°C unless otherwise noted Parameter
Drain-Source Voltage Symbol
VDS Gate-Source Voltage VGS
TC=25В°C Continuous Drain
Current Avalanche Current C C L=0.01mH Power Dissipation B TC=100°C C TC=25°C Junction and Storage Temperature Range Rev 1.0: February 2018 V 85 t ≤ 10s
Steady-State
Steady-State A 40 67
280 25 50 20 41 IAS 50 60 A EAS 13 18 mJ PDSM TA=70В°C Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case (Note)
Note: Bottom S2, D1. В±12 62 PD TA=25В°C
Power Dissipation A В±12 IDSM TA=70В°C Avalanche energy Units …