Datasheet New Jersey Semiconductor IRFP360 — Ficha de datos
Fabricante | New Jersey Semiconductor |
Serie | IRFP360 |
Numero de parte | IRFP360 |
Trans MOSFET N-CH 400V 23A 3-Pin (3 + Tab) TO-247AC
Hojas de datos
Datasheet IRFP360, IRFP362
PDF, 650 Kb, Archivo subido: jun 22, 2018, Páginas: 2
Avalanche-Energy-Rated N-Channel Power MOSFETs
Avalanche-Energy-Rated N-Channel Power MOSFETs
Extracto del documento
Precios
Paramétricos
Category | Power MOSFET |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Maximum Continuous Drain Current | 23 A |
Maximum Drain Source Voltage | 400 V |
Maximum Gate Source Voltage | ±20 V |
Maximum Power Dissipation | 280000 mW |
Number of Elements per Chip | 1 |
Operating Temperature Max | 150 °C |
Operating Temperature Min | -55 °C |
Otras opciones
Clasificación del fabricante
- MOSFET