Datasheet Texas Instruments LMG1210RVRT — Ficha de datos

200V, 1.5A / 3A Driver de medio puente GaN con tiempo muerto ajustable 19-WQFN -40 a 125

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PDF, 596 Kb, Archivo publicado: feb 14, 2018

Extracto del documento

Estado del ciclo de vida	Vista previa (El dispositivo ha sido anunciado pero no está en producción. Las muestras pueden o no estar disponibles)
Disponibilidad de muestra del fabricante	No

Bus Voltage	200 V
Driver Configuration	Half Bridge
Fall Time	0.5 ns
Input Threshold	TTL
Input VCC(Max)	18 V
Input VCC(Min)	6 V
Number of Channels	2
Operating Temperature Range	-40 to 125 C
Package Group	WQFN
Package Size: mm2:W x L	19WQFN: 12 mm2: 4 x 3(WQFN) PKG
Peak Output Current	3 A
Power Switch	MOSFET,GaNFET
Prop Delay	10 ns
Rating	Catalog
Rise Time	0.5 ns

RoHS	See ti.com

Evaluation Modules & Boards: LMG1210EVM-012
LMG1210 Half-bridge Open Loop Evaluation Module
Estado del ciclo de vida: Activo (Recomendado para nuevos diseños)
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Optimizing Efficiency Through Dead Time Control With the LMG1210 GaN Driver
PDF, 139 Kb, Archivo publicado: feb 14, 2018
Dead time is an extremely important design parameter in some high-frequency converters using GaN.Dead time becomes ever more important as the frequency of operation increases. This reportdemonstrates the need for dead time optimization by measuring efficiency of a converter with varyingdead times. This report also discusses the various sources of propagation delay mismatch which causedead

Serie: LMG1210 (3)

Semiconductors > Power Management > Gallium Nitride (GaN) Solutions > GaN FET Drivers