Datasheet Microchip TN2640N3-G — Ficha de datos

Supertex inc. TN2640 N-Channel Enhancement-Mode
Vertical DMOS FETs
Features General Description This low threshold enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally induced
secondary breakdown. в–єв–є Low threshold (2.0V max.)
в–єв–є High input impedance
в–єв–є Low input capacitance
в–єв–є Fast switching speeds
в–єв–є Low on-resistance
в–єв–є Free from secondary breakdown
в–єв–є Low input and output leakage Applications в–єв–є Logic level interfaces -ideal for TTL and CMOS
в–єв–є Solid state relays
в–єв–є Battery operated systems
в–єв–є Photo voltaic drives
в–єв–є Analog switches
в–єв–є General purpose line drivers
в–єв–є Telecom switches Supertex’s vertical DMOS FETs are ideally suited to a …