Datasheet IRF7907PBF - International Rectifier MOSFET, NN CH, 30 V, 9.1 A, SO8 — Ficha de datos

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Manufacturer: International Rectifier

Description: MOSFET, NN CH, 30 V, 9.1 A, SO8

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Docket:
PD - 97066A
IRF7907PbF
HEXFET® Power MOSFET
Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max.

Gate Rating l Improved Body Diode Reverse Recovery l 100% Tested for RG l Lead-Free
VDSS

Specifications:

• Current Id Max: 11 A
• Drain Source Voltage Vds: 30 V
• Module Configuration: Dual
• Number of Pins: 8
• On Resistance Rds(on): 9.8 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 2 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• International Rectifier - IRF8707GPBF