Datasheet IRF6644TR1 - International Rectifier MOSFET, N, DIRECTFET, MN — Ficha de datos

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Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, MN

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Docket:
PD - 96908E
IRF6644
DirectFET Power MOSFET
l l l l l l l l l
RoHs Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques

Simulation Model

Specifications:

• Capacitance Ciss Typ: 2210 pF
• Continuous Drain Current Id: 10.3 A
• Drain Source Voltage Vds: 100 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -40°C
• Mounting Type: SMD
• On State Resistance: 10.3 MOhm
• Package / Case: MN
• Power Dissipation Pd: 2.8 W
• Pulse Current Idm: 82 A
• Reverse Recovery Time trr Typ: 42 ns
• SMD Marking: 6644
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4.8 V
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vds: 100 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• International Rectifier - IRF6644TR1PBF
• LICEFA - V11-7-6-10
• LICEFA - V11-7