Datasheet SDT12S60 - Infineon DIODE, SCHOTTKY, SIC, 600 V — Ficha de datos
Part Number: SDT12S60
Descripción detallada
Manufacturer: Infineon
Description: DIODE, SCHOTTKY, SIC, 600 V
Docket:
Preliminary data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery
SDT12S60
Product Summary VRRM Qc IF 600 30 12
P-TO220-2-2.
Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature
Specifications:
- Alternate Case Style: DO-220
- Current Ifsm: 36 A
- Diode Type: Schottky
- Forward Current If(AV): 12 A
- Forward Surge Current Ifsm Max: 36 A
- Forward Voltage VF Max: 1.7 V
- Junction Temperature Tj Max: 175°C
- Junction Temperature Tj Min: -55°C
- Mounting Type: Through Hole
- Number of Pins: 2
- Operating Temperature Range: -55°C to +175°C
- Package / Case: TO-220
- Repetitive Reverse Voltage Vrrm Max: 600 V
RoHS: Yes
Accessories:
- Fischer Elektronik - SK 145/37,5 STS-220
- Fischer Elektronik - SK 409/25,4 STS
- Fischer Elektronik - SK 409/50,8 STS
- Fischer Elektronik - WLK 5