Datasheet Texas Instruments TLV2341 — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | TLV2341 |
Amplificador operacional de bajo voltaje programable LinCMOS (TM)
Hojas de datos
LinCMOS Programmable Low-Voltage Operational Amplifiers datasheet
PDF, 735 Kb, Revisión: A, Archivo publicado: agosto 1, 1994
Extracto del documento
LinCMOS Programmable Low-Voltage Operational Amplifiers (Rev. A)
PDF, 907 Kb, Revisión: A, Archivo publicado: agosto 1, 1994
Precios
Estado
| TLV2341ID | TLV2341IDG4 | TLV2341IDR | TLV2341IP | TLV2341IPE4 | TLV2341IPWLE | |
|---|---|---|---|---|---|---|
| Estado del ciclo de vida | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) | Obsoleto (El fabricante ha interrumpido la producción del dispositivo) | Activo (Recomendado para nuevos diseños) | Obsoleto (El fabricante ha interrumpido la producción del dispositivo) |
| Disponibilidad de muestra del fabricante | No | No | No | No | No | No |
Embalaje
| TLV2341ID | TLV2341IDG4 | TLV2341IDR | TLV2341IP | TLV2341IPE4 | TLV2341IPWLE | |
|---|---|---|---|---|---|---|
| N | 1 | 2 | 3 | 4 | 5 | 6 |
| Pin | 8 | 8 | 8 | 8 | 8 | 8 |
| Package Type | D | D | D | P | P | PW |
| Industry STD Term | SOIC | SOIC | SOIC | PDIP | PDIP | TSSOP |
| JEDEC Code | R-PDSO-G | R-PDSO-G | R-PDSO-G | R-PDIP-T | R-PDIP-T | R-PDSO-G |
| Package QTY | 75 | 75 | 2500 | |||
| Carrier | TUBE | TUBE | LARGE T&R | |||
| Device Marking | 2341I | 2341I | 2341I | TLV2341IP | ||
| Width (mm) | 3.91 | 3.91 | 3.91 | 6.35 | 6.35 | 4.4 |
| Length (mm) | 4.9 | 4.9 | 4.9 | 9.81 | 9.81 | 3 |
| Thickness (mm) | 1.58 | 1.58 | 1.58 | 3.9 | 3.9 | 1 |
| Pitch (mm) | 1.27 | 1.27 | 1.27 | 2.54 | 2.54 | .65 |
| Max Height (mm) | 1.75 | 1.75 | 1.75 | 5.08 | 5.08 | 1.2 |
| Mechanical Data | Descargar | Descargar | Descargar | Descargar | Descargar | Descargar |
Paramétricos
| Parameters / Models | TLV2341ID | TLV2341IDG4 | TLV2341IDR | TLV2341IP | TLV2341IPE4 | TLV2341IPWLE |
|---|---|---|---|---|---|---|
| Additional Features | N/A | N/A | N/A | N/A | N/A | |
| Approx. Price (US$) | 0.89 | 1ku | 1.06 | 1ku | 1.06 | 1ku | 1.06 | 1ku | ||
| Architecture | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| CMRR(Min), dB | 65 | 65 | ||||
| CMRR(Min)(dB) | 65 | 65 | 65 | 65 | ||
| CMRR(Typ), dB | 80 | 80 | ||||
| CMRR(Typ)(dB) | 80 | 80 | 80 | 80 | ||
| GBW(Typ), MHz | 0.32 | 0.32 | ||||
| GBW(Typ)(MHz) | 0.32 | 0.32 | 0.32 | 0.32 | ||
| IIB(Max)(pA) | 200 | |||||
| Input Bias Current(Max), pA | 200 | 200 | ||||
| Input Bias Current(Max)(pA) | 200 | 200 | 200 | |||
| Iq per channel(Max), mA | 1.6 | 1.6 | ||||
| Iq per channel(Max)(mA) | 1.6 | 1.6 | 1.6 | 1.6 | ||
| Iq per channel(Typ), mA | 0.675 | 0.675 | ||||
| Iq per channel(Typ)(mA) | 0.675 | 0.675 | 0.675 | 0.675 | ||
| Number of Channels | 1 | 1 | ||||
| Number of Channels(#) | 1 | 1 | 1 | 1 | ||
| Offset Drift(Typ), uV/C | 2.7 | 2.7 | ||||
| Offset Drift(Typ)(uV/C) | 2.7 | 2.7 | 2.7 | 2.7 | ||
| Operating Temperature Range, C | -40 to 85 | -40 to 85 | ||||
| Operating Temperature Range(C) | -40 to 85 | -40 to 85 | -40 to 85 | |||
| Output Current(Typ), mA | 9 | 9 | ||||
| Output Current(Typ)(mA) | 9 | 9 | 9 | 9 | ||
| Package Group | SOIC | SOIC | SOIC | PDIP | PDIP | PDIP SOIC |
| Package Size(mm2=WxL) | 8SOIC: 29 mm2: 6 x 4.9 | |||||
| Package Size: mm2:W x L, PKG | 8SOIC: 29 mm2: 6 x 4.9(SOIC) | 8SOIC: 29 mm2: 6 x 4.9(SOIC) | ||||
| Package Size: mm2:W x L (PKG) | See datasheet (PDIP) | See datasheet (PDIP) | See datasheet (PDIP) | |||
| Rail-to-Rail | In to V-,Out | In to V-,Out | In to V- Out | In to V- Out | In to V- Out | In to V- Out |
| Rating | Catalog | Catalog | Catalog | Catalog | Catalog | Catalog |
| Slew Rate(Typ), V/us | 3.6 | 3.6 | ||||
| Slew Rate(Typ)(V/us) | 3.6 | 3.6 | 3.6 | 3.6 | ||
| Total Supply Voltage(Max), +5V=5, +/-5V=10 | 8 | 8 | ||||
| Total Supply Voltage(Max)(+5V=5, +/-5V=10) | 8 | 8 | 8 | 8 | ||
| Total Supply Voltage(Min), +5V=5, +/-5V=10 | 2 | 2 | ||||
| Total Supply Voltage(Min)(+5V=5, +/-5V=10) | 2 | 2 | 2 | 2 | ||
| Vn at 1kHz(Typ), nV/rtHz | 25 | 25 | ||||
| Vn at 1kHz(Typ)(nV/rtHz) | 25 | 25 | 25 | 25 | ||
| Vos (Offset Voltage @ 25C)(Max), mV | 8 | 8 | ||||
| Vos (Offset Voltage @ 25C)(Max)(mV) | 8 | 8 | 8 | 8 |
Plan ecológico
| TLV2341ID | TLV2341IDG4 | TLV2341IDR | TLV2341IP | TLV2341IPE4 | TLV2341IPWLE | |
|---|---|---|---|---|---|---|
| RoHS | Obediente | Obediente | Obediente | Desobediente | Desobediente | Desobediente |
| Pb gratis | No | Sí | No | No |
Notas de aplicación
- TLV2341 EMI Immunity PerformancePDF, 88 Kb, Archivo publicado: jun 9, 2013
- Low-Power Signal Conditioning For A Pressure Sensor (Rev. A)PDF, 469 Kb, Revisión: A, Archivo publicado: mayo 18, 2015
- High-Voltage Signal Conditioning for Low Voltage ADCsPDF, 135 Kb, Archivo publicado: jun 15, 2004
Analog designers are frequently required to develop circuits that convert high-voltage signals to levels acceptable for low-voltage data converters. This paper describes several solutions for this common task using modern amplifiers and typical power supplies. Five examples of conditioning ±10V bipolar signals for low-voltage single-rail analog-to-digital converters(ADCs) are presented: - TLV2341 EMI Immunity PerformancePDF, 88 Kb, Archivo publicado: jun 9, 2013
- Low-Power Signal Conditioning For A Pressure Sensor (Rev. A)PDF, 469 Kb, Revisión: A, Archivo publicado: mayo 18, 2015
Low-Power Signal Conditioning for a Pressure Sensor - High-Voltage Signal Conditioning for Low Voltage ADCsPDF, 135 Kb, Archivo publicado: jun 15, 2004
Analog designers are frequently required to develop circuits that convert high-voltage signals to levels acceptable for low-voltage data converters. This paper describes several solutions for this com
Linea modelo
Serie: TLV2341 (6)
Clasificación del fabricante
- Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> Precision Op Amps