Datasheet Texas Instruments LMC660 — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | LMC660 |
Amplificador operacional cuádruple CMOS
Hojas de datos
LMC660 CMOS Quad Operational Amplifier datasheet
PDF, 1.3 Mb, Revisión: D, Archivo publicado: marzo 26, 2013
Extracto del documento
Precios
Estado
| LMC660AIM | LMC660AIM/NOPB | LMC660AIMX | LMC660AIMX/NOPB | LMC660AIN/NOPB | LMC660CM | LMC660CM/NOPB | LMC660CMX/NOPB | LMC660CN/NOPB | |
|---|---|---|---|---|---|---|---|---|---|
| Estado del ciclo de vida | NRND (No recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) | NRND (No recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) | NRND (No recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) |
| Disponibilidad de muestra del fabricante | No | Sí | Sí | No | Sí | No | No | No | Sí |
Embalaje
| LMC660AIM | LMC660AIM/NOPB | LMC660AIMX | LMC660AIMX/NOPB | LMC660AIN/NOPB | LMC660CM | LMC660CM/NOPB | LMC660CMX/NOPB | LMC660CN/NOPB | |
|---|---|---|---|---|---|---|---|---|---|
| N | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
| Pin | 14 | 14 | 14 | 14 | 14 | 14 | 14 | 14 | 14 |
| Package Type | D | D | D | D | NFF | D | D | D | NFF |
| Industry STD Term | SOIC | SOIC | SOIC | SOIC | PDIP | SOIC | SOIC | SOIC | PDIP |
| JEDEC Code | R-PDSO-G | R-PDSO-G | R-PDSO-G | R-PDSO-G | R-PDIP-T | R-PDSO-G | R-PDSO-G | R-PDSO-G | R-PDIP-T |
| Package QTY | 55 | 55 | 2500 | 2500 | 25 | 55 | 55 | 2500 | 25 |
| Carrier | TUBE | TUBE | LARGE T&R | LARGE T&R | TUBE | TUBE | TUBE | LARGE T&R | TUBE |
| Device Marking | LMC660AIM | LMC660AIM | LMC660AIM | LMC660AIM | LMC660AIN | LMC660CM | LMC660CM | LMC660CM | LMC660CN |
| Width (mm) | 3.91 | 3.91 | 3.91 | 3.91 | 6.35 | 3.91 | 3.91 | 3.91 | 6.35 |
| Length (mm) | 8.65 | 8.65 | 8.65 | 8.65 | 19.177 | 8.65 | 8.65 | 8.65 | 19.177 |
| Thickness (mm) | 1.58 | 1.58 | 1.58 | 1.58 | 3.429 | 1.58 | 1.58 | 1.58 | 3.429 |
| Pitch (mm) | 1.27 | 1.27 | 1.27 | 1.27 | 2.54 | 1.27 | 1.27 | 1.27 | 2.54 |
| Max Height (mm) | 1.75 | 1.75 | 1.75 | 1.75 | 5.33 | 1.75 | 1.75 | 1.75 | 5.33 |
| Mechanical Data | Descargar | Descargar | Descargar | Descargar | Descargar | Descargar | Descargar | Descargar | Descargar |
Paramétricos
| Parameters / Models | LMC660AIM | LMC660AIM/NOPB | LMC660AIMX | LMC660AIMX/NOPB | LMC660AIN/NOPB | LMC660CM | LMC660CM/NOPB | LMC660CMX/NOPB | LMC660CN/NOPB |
|---|---|---|---|---|---|---|---|---|---|
| Additional Features | N/A | N/A | N/A | N/A | N/A | N/A | N/A | N/A | N/A |
| Architecture | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| CMRR(Min), dB | 63 | 63 | 63 | 63 | 63 | 63 | 63 | 63 | 63 |
| CMRR(Typ), dB | 83 | 83 | 83 | 83 | 83 | 83 | 83 | 83 | 83 |
| GBW(Typ), MHz | 1.4 | 1.4 | 1.4 | 1.4 | 1.4 | 1.4 | 1.4 | 1.4 | 1.4 |
| Input Bias Current(Max), pA | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 |
| Iq per channel(Max), mA | 0.55 | 0.55 | 0.55 | 0.55 | 0.55 | 0.55 | 0.55 | 0.55 | 0.55 |
| Iq per channel(Typ), mA | 0.38 | 0.38 | 0.38 | 0.38 | 0.38 | 0.38 | 0.38 | 0.38 | 0.38 |
| Number of Channels | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| Offset Drift(Typ), uV/C | 1.3 | 1.3 | 1.3 | 1.3 | 1.3 | 1.3 | 1.3 | 1.3 | 1.3 |
| Operating Temperature Range, C | -40 to 85,0 to 70 | -40 to 85,0 to 70 | -40 to 85,0 to 70 | -40 to 85,0 to 70 | -40 to 85,0 to 70 | -40 to 85,0 to 70 | -40 to 85,0 to 70 | -40 to 85,0 to 70 | -40 to 85,0 to 70 |
| Output Current(Typ), mA | 21 | 21 | 21 | 21 | 21 | 21 | 21 | 21 | 21 |
| Package Group | SOIC | SOIC | SOIC | SOIC | PDIP | SOIC | SOIC | SOIC | PDIP |
| Package Size: mm2:W x L, PKG | 14SOIC: 52 mm2: 6 x 8.65(SOIC) | 14SOIC: 52 mm2: 6 x 8.65(SOIC) | 14SOIC: 52 mm2: 6 x 8.65(SOIC) | 14SOIC: 52 mm2: 6 x 8.65(SOIC) | See datasheet (PDIP) | 14SOIC: 52 mm2: 6 x 8.65(SOIC) | 14SOIC: 52 mm2: 6 x 8.65(SOIC) | 14SOIC: 52 mm2: 6 x 8.65(SOIC) | See datasheet (PDIP) |
| Rail-to-Rail | In to V-,Out | In to V-,Out | In to V-,Out | In to V-,Out | In to V-,Out | In to V-,Out | In to V-,Out | In to V-,Out | In to V-,Out |
| Rating | Catalog | Catalog | Catalog | Catalog | Catalog | Catalog | Catalog | Catalog | Catalog |
| Slew Rate(Typ), V/us | 1.1 | 1.1 | 1.1 | 1.1 | 1.1 | 1.1 | 1.1 | 1.1 | 1.1 |
| Total Supply Voltage(Max), +5V=5, +/-5V=10 | 15.5 | 15.5 | 15.5 | 15.5 | 15.5 | 15.5 | 15.5 | 15.5 | 15.5 |
| Total Supply Voltage(Min), +5V=5, +/-5V=10 | 4.75 | 4.75 | 4.75 | 4.75 | 4.75 | 4.75 | 4.75 | 4.75 | 4.75 |
| Vn at 1kHz(Typ), nV/rtHz | 22 | 22 | 22 | 22 | 22 | 22 | 22 | 22 | 22 |
| Vos (Offset Voltage @ 25C)(Max), mV | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Plan ecológico
| LMC660AIM | LMC660AIM/NOPB | LMC660AIMX | LMC660AIMX/NOPB | LMC660AIN/NOPB | LMC660CM | LMC660CM/NOPB | LMC660CMX/NOPB | LMC660CN/NOPB | |
|---|---|---|---|---|---|---|---|---|---|
| RoHS | See ti.com | Obediente | See ti.com | Obediente | Obediente | See ti.com | Obediente | Obediente | Obediente |
Notas de aplicación
- AN-856 A SPICE Comp Macromodel for CMOS Op Amplifiers (Rev. C)PDF, 203 Kb, Revisión: C, Archivo publicado: mayo 6, 2013
A SPICE macromodel that captures the “personality” of Texas Instruments CMOS op-amps has beendeveloped. The salient features of the macromodel are a MOSFET input stage, Miller compensation, anda current-source output stage. A description of the model is provided along with correlation to actualdevice behavior. - Effect of Heavy Loads on Accuracy and Linearity of Op Amp Circuits (Rev. B)PDF, 81.7 Mb, Revisión: B, Archivo publicado: abr 22, 2013
This application report discusses the effect of heavy loads on the accuracy and linearity of operationalamplifier circuits.
Linea modelo
Serie: LMC660 (9)
Clasificación del fabricante
- Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> Precision Op Amps