Datasheet Texas Instruments INA217 — Ficha de datos
Fabricante | Texas Instruments |
Serie | INA217 |
Reemplazo de amplificador de instrumentación de bajo ruido y baja distorsión para SSM2017
Hojas de datos
INA217 Low-Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017 datasheet
PDF, 960 Kb, Revisión: C, Archivo publicado: abr 8, 2015
Extracto del documento
Precios
Estado
INA217AIDWR | INA217AIDWT | INA217AIDWTE4 | INA217AIP | INA217AIPG4 | |
---|---|---|---|---|---|
Estado del ciclo de vida | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) |
Disponibilidad de muestra del fabricante | Sí | Sí | No | No | No |
Embalaje
INA217AIDWR | INA217AIDWT | INA217AIDWTE4 | INA217AIP | INA217AIPG4 | |
---|---|---|---|---|---|
N | 1 | 2 | 3 | 4 | 5 |
Pin | 16 | 16 | 16 | 8 | 8 |
Package Type | DW | DW | DW | P | P |
Industry STD Term | SOIC | SOIC | SOIC | PDIP | PDIP |
JEDEC Code | R-PDSO-G | R-PDSO-G | R-PDSO-G | R-PDIP-T | R-PDIP-T |
Package QTY | 2000 | 250 | 250 | 50 | 50 |
Carrier | LARGE T&R | SMALL T&R | SMALL T&R | TUBE | TUBE |
Device Marking | INA217 | INA217 | INA217 | INA217 | INA217 |
Width (mm) | 7.5 | 7.5 | 7.5 | 6.35 | 6.35 |
Length (mm) | 10.3 | 10.3 | 10.3 | 9.81 | 9.81 |
Thickness (mm) | 2.35 | 2.35 | 2.35 | 3.9 | 3.9 |
Pitch (mm) | 1.27 | 1.27 | 1.27 | 2.54 | 2.54 |
Max Height (mm) | 2.65 | 2.65 | 2.65 | 5.08 | 5.08 |
Mechanical Data | Descargar | Descargar | Descargar | Descargar | Descargar |
Paramétricos
Parameters / Models | INA217AIDWR | INA217AIDWT | INA217AIDWTE4 | INA217AIP | INA217AIPG4 |
---|---|---|---|---|---|
Bandwidth at Min Gain(Typ), MHz | 3.4 | 3.4 | 3.4 | 3.4 | 3.4 |
CMRR(Min), dB | 100 | 100 | 100 | 100 | 100 |
Gain Error (+/-)(Max), % | 0.7 | 0.7 | 0.7 | 0.7 | 0.7 |
Gain Non-Linearity (+/-)(Max), % | 0.0006 | 0.0006 | 0.0006 | 0.0006 | 0.0006 |
Gain(Max), V/V | 10000 | 10000 | 10000 | 10000 | 10000 |
Gain(Min), V/V | 1 | 1 | 1 | 1 | 1 |
Input Bias Current (+/-)(Max), nA | 12000 | 12000 | 12000 | 12000 | 12000 |
Input Offset (+/-)(Max), uV | 250 | 250 | 250 | 250 | 250 |
Input Offset Drift (+/-)(Max), uV/C | 1 | 1 | 1 | 1 | 1 |
Iq(Typ), mA | 10 | 10 | 10 | 10 | 10 |
Noise at 0.1 Hz - 10 Hz(Typ), uVpp | 2 | 2 | 2 | 2 | 2 |
Noise at 1kHz(Typ)(nV/rt, Hz | 1.3 | 1.3 | 1.3 | 1.3 | 1.3 |
Number of Channels | 1 | 1 | 1 | 1 | 1 |
Operating Temperature Range, C | -40 to 125,-40 to 85 | -40 to 125,-40 to 85 | -40 to 125,-40 to 85 | -40 to 125,-40 to 85 | -40 to 125,-40 to 85 |
Package Group | SOIC | SOIC | SOIC | PDIP | PDIP |
Package Size: mm2:W x L, PKG | 16SOIC: 106 mm2: 10.3 x 10.3(SOIC) | 16SOIC: 106 mm2: 10.3 x 10.3(SOIC) | 16SOIC: 106 mm2: 10.3 x 10.3(SOIC) | See datasheet (PDIP) | See datasheet (PDIP) |
Rating | Catalog | Catalog | Catalog | Catalog | Catalog |
Vs(Max), V | 36 | 36 | 36 | 36 | 36 |
Vs(Min), V | 9 | 9 | 9 | 9 | 9 |
Plan ecológico
INA217AIDWR | INA217AIDWT | INA217AIDWTE4 | INA217AIP | INA217AIPG4 | |
---|---|---|---|---|---|
RoHS | Obediente | Obediente | Obediente | Obediente | Obediente |
Linea modelo
Serie: INA217 (5)
Clasificación del fabricante
- Semiconductors> Amplifiers> Instrumentation Amplifiers