Datasheet Texas Instruments DRV411AIRGPR — Ficha de datos

IC de acondicionamiento de señal de sensor magnético de efecto Hall para aplicaciones de circuito cerrado 20-QFN -40 a 125

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PDF, 1.6 Mb, Revisión: B, Archivo publicado: dic 12, 2013

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Estado del ciclo de vida	Activo (Recomendado para nuevos diseños)
Disponibilidad de muestra del fabricante	No

Architecture	Closed Loop
Current Sensor Type	Hall-effect External
Gain Drift(Typ)	1 ppm/C
Gain Error (+/-)(Max)	0.3 %
Offset Drift(Max)	2 uV/C
Offset Voltage (+/-)	100 uV
Operating Temperature Range	-40 to 125 C
Package Group	QFN
Package Size: mm2:W x L	20QFN: 16 mm2: 4 x 4(QFN) PKG
Rating	Catalog
Reference Accuracy (+/-)(Max)	0.2 %
Reference Drift(Max)(	50 В±
Reference Voltage	1.65 / 2.5 / Ratiometric V
System Bandwidth	2000 KHz
Vs(Max)	5.5 V
Vs(Min)	2.7 V

RoHS

Obediente

Evaluation Modules & Boards: DRV411EVM
Evaluation Module for Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors
Estado del ciclo de vida: Activo (Recomendado para nuevos diseños)
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Design Considerations for the DRV411
PDF, 181 Kb, Archivo publicado: feb 26, 2015
The DRV411 is a signal-conditioning integrated circuit for use in closed-loop, magnetic, current-sensor modules. The DRV411 is designed to interface with symmetrical indium antimonide (InSb) and gallium arsenide (GaAs) type Hall sensors. Symmetrical Hall elements have their input and output impedances closely matched. The DRV411 contains excitation and conditioning circuitry that significantly red

Serie: DRV411 (4)