Datasheet Texas Instruments DRV411AIPWP — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | DRV411 |
| Numero de parte | DRV411AIPWP |
IC de acondicionamiento de señal del sensor magnético de efecto Hall para aplicaciones de circuito cerrado 20-HTSSOP -40 a 125
Hojas de datos
Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors datasheet
PDF, 1.6 Mb, Revisión: B, Archivo publicado: dic 12, 2013
Extracto del documento
Precios
Estado
| Estado del ciclo de vida | Activo (Recomendado para nuevos diseños) |
| Disponibilidad de muestra del fabricante | Sí |
Embalaje
| Pin | 20 |
| Package Type | PWP |
| Industry STD Term | HTSSOP |
| JEDEC Code | R-PDSO-G |
| Package QTY | 70 |
| Carrier | TUBE |
| Device Marking | DRV411 |
| Width (mm) | 4.4 |
| Length (mm) | 6.5 |
| Thickness (mm) | 1 |
| Pitch (mm) | .65 |
| Max Height (mm) | 1.2 |
| Mechanical Data | Descargar |
Paramétricos
| Architecture | Closed Loop |
| Current Sensor Type | Hall-effect External |
| Gain Drift(Typ) | 1 ppm/C |
| Gain Error (+/-)(Max) | 0.3 % |
| Offset Drift(Max) | 2 uV/C |
| Offset Voltage (+/-) | 100 uV |
| Operating Temperature Range | -40 to 125 C |
| Package Group | HTSSOP |
| Package Size: mm2:W x L | 20HTSSOP: 42 mm2: 6.4 x 6.5(HTSSOP) PKG |
| Rating | Catalog |
| Reference Accuracy (+/-)(Max) | 0.2 % |
| Reference Drift(Max)( | 50 В± |
| Reference Voltage | 1.65 / 2.5 / Ratiometric V |
| System Bandwidth | 2000 KHz |
| Vs(Max) | 5.5 V |
| Vs(Min) | 2.7 V |
Plan ecológico
| RoHS | Obediente |
Kits de diseño y Módulos de evaluación
- Evaluation Modules & Boards: DRV411EVM
Evaluation Module for Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors
Estado del ciclo de vida: Activo (Recomendado para nuevos diseños)
Notas de aplicación
- Design Considerations for the DRV411PDF, 181 Kb, Archivo publicado: feb 26, 2015
The DRV411 is a signal-conditioning integrated circuit for use in closed-loop, magnetic, current-sensor modules. The DRV411 is designed to interface with symmetrical indium antimonide (InSb) and gallium arsenide (GaAs) type Hall sensors. Symmetrical Hall elements have their input and output impedances closely matched. The DRV411 contains excitation and conditioning circuitry that significantly red
Linea modelo
Serie: DRV411 (4)
- DRV411AIPWP DRV411AIPWPR DRV411AIRGPR DRV411AIRGPT
Clasificación del fabricante
- Semiconductors > Sensing Products > Magnetic Sensors > Fluxgate Sensors