Datasheet Texas Instruments CSD23202W10 — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | CSD23202W10 |
CSD23202W10 12 V P-Channel NexFET (TM) Power MOSFET
Hojas de datos
CSD23202W10 12-V P-Channel NexFET Power MOSFET datasheet
PDF, 435 Kb, Archivo publicado: marzo 10, 2014
Extracto del documento
Precios
Estado
| CSD23202W10 | CSD23202W10T | |
|---|---|---|
| Estado del ciclo de vida | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) |
| Disponibilidad de muestra del fabricante | No | Sí |
Embalaje
| CSD23202W10 | CSD23202W10T | |
|---|---|---|
| N | 1 | 2 |
| Pin | 4 | 4 |
| Package Type | YZB | YZB |
| Industry STD Term | DSBGA | DSBGA |
| JEDEC Code | S-XBGA-N | S-XBGA-N |
| Package QTY | 3000 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | 202 | 202 |
| Thickness (mm) | .65 | .65 |
| Pitch (mm) | .5 | .5 |
| Max Height (mm) | .625 | .625 |
| Mechanical Data | Descargar | Descargar |
Paramétricos
| Parameters / Models | CSD23202W10 | CSD23202W10T |
|---|---|---|
| Configuration | Single | Single |
| Id Max Cont, A | -2.2 | -2.2 |
| Id Peak(Max), A | -25 | -25 |
| Package, mm | WLP 1.0x1.0 | WLP 1.0x1.0 |
| QG Typ, nC | 2.9 | 2.9 |
| QGD Typ, nC | 0.28 | 0.28 |
| QGS Typ, nC | 0.55 | 0.55 |
| Rds(on) Max at VGS=1.8V, mOhms | 92 | 92 |
| Rds(on) Max at VGS=2.5V, mOhms | 66 | 66 |
| Rds(on) Max at VGS=4.5V, mOhms | 53 | 53 |
| VDS, V | -12 | -12 |
| VGS, V | -6 | -6 |
| VGSTH Typ, V | -0.6 | -0.6 |
Plan ecológico
| CSD23202W10 | CSD23202W10T | |
|---|---|---|
| RoHS | Obediente | Obediente |
Linea modelo
Serie: CSD23202W10 (2)
Clasificación del fabricante
- Semiconductors> Power Management> Power MOSFET> P-Channel MOSFET Transistor