Datasheet Texas Instruments CSD16570Q5B — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | CSD16570Q5B |
CSD16570Q5B, 25-V N-Channel NexFET® „MOSFET de potencia
Hojas de datos
CSD16570Q5B 25-V N-Channel NexFET Power MOSFET datasheet
PDF, 438 Kb, Revisión: A, Archivo publicado: mayo 19, 2017
Extracto del documento
Precios
Estado
| CSD16570Q5B | CSD16570Q5BT | |
|---|---|---|
| Estado del ciclo de vida | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) |
| Disponibilidad de muestra del fabricante | Sí | No |
Embalaje
| CSD16570Q5B | CSD16570Q5BT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | DNK | DNK |
| Package QTY | 2500 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | CSD16570 | CSD16570 |
| Width (mm) | 6 | 6 |
| Length (mm) | 5 | 5 |
| Thickness (mm) | .95 | .95 |
| Mechanical Data | Descargar | Descargar |
Paramétricos
| Parameters / Models | CSD16570Q5B | CSD16570Q5BT |
|---|---|---|
| Configuration | Single | Single |
| ID, Silicon limited at Tc=25degC, A | 456 | 456 |
| IDM, Max Pulsed Drain Current(Max), A | 400 | 400 |
| Package, mm | SON5x6 | SON5x6 |
| QG Typ, nC | 95 | 95 |
| QGD Typ, nC | 31 | 31 |
| RDS(on) Typ at VGS=4.5V, mOhm | 0.68 | 0.68 |
| Rds(on) Max at VGS=10V, mOhms | 0.59 | 0.59 |
| Rds(on) Max at VGS=4.5V, mOhms | 0.82 | 0.82 |
| VDS, V | 25 | 25 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 1.5 | 1.5 |
Plan ecológico
| CSD16570Q5B | CSD16570Q5BT | |
|---|---|---|
| RoHS | Obediente | Obediente |
| Pb gratis | Sí | Sí |
Linea modelo
Serie: CSD16570Q5B (2)
Clasificación del fabricante
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor