Datasheet Texas Instruments CD54HCT74 — Ficha de datos

Fabricante	Texas Instruments
Serie	CD54HCT74

Hojas de datos

Precios

Estado

Embalaje

Paramétricos

Parameters / Models	5962-8685301CA	CD54HCT74F	CD54HCT74F3A
3-State Output	No	No	No
Bits	2	2	2
F @ Nom Voltage(Max), Mhz	25	25	25
ICC @ Nom Voltage(Max), mA	0.04	0.04	0.04
Input Type	TTL	TTL	TTL
Operating Temperature Range, C	-55 to 125	-55 to 125	-55 to 125
Output Drive (IOL/IOH)(Max), mA	4/-4	4/-4	4/-4
Output Type	CMOS	CMOS	CMOS
Package Group	CDIP	CDIP	CDIP
Package Size: mm2:W x L, PKG	See datasheet (CDIP)	See datasheet (CDIP)	See datasheet (CDIP)
Rating	Military	Military	Military
Technology Family	HCT	HCT	HCT
VCC(Max), V	5.5	5.5	5.5
VCC(Min), V	4.5	4.5	4.5
tpd @ Nom Voltage(Max), ns	44	44	44

Plan ecológico

Notas de aplicación

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  The TI SN54/74HCT family of CMOS devices is a subgroup of the SN74HC series with the HCT circuitry modified to meet the interfacing requirements of TTL outputs to high-speed CMOS inputs. The HCT devices can be driven by the TTL circuits directly without additional components. This document describes the TTL/HC interface the operating voltages circuit noise and power consumption. A Bergeron anal
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  TI IBIS File Creation Validation and Distribution Processes
  PDF, 380 Kb, Archivo publicado: agosto 29, 2002
  The Input/Output Buffer Information Specification (IBIS) also known as ANSI/EIA-656 has become widely accepted among electronic design automation (EDA) vendors semiconductor vendors and system designers as the format for digital electrical interface data. Because IBIS models do not reveal proprietary internal processes or architectural information semiconductor vendors? support for IBIS con
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  PDF, 614 Kb, Revisión: C, Archivo publicado: dic 2, 2015
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  Semiconductor Packing Material Electrostatic Discharge (ESD) Protection
  PDF, 337 Kb, Archivo publicado: jul 8, 2004
  Forty-eight-pin TSSOP components that were packaged using Texas Instruments (TI) standard packing methodology were subjected to electrical discharges between 0.5 and 20 kV as generated by an IEC ESD simulator to determine the level of ISD protection provided by the packing materials. The testing included trays tape and reel and magazines. Additional units were subjected to the same discharge
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  Designing With Logic (Rev. C)
  PDF, 186 Kb, Revisión: C, Archivo publicado: jun 1, 1997
  Data sheets which usually give information on device behavior only under recommended operating conditions may only partially answer engineering questions that arise during the development of systems using logic devices. However information is frequently needed regarding the behavior of the device outside the conditions in the data sheet. Such questions might be:?How does a bus driver behave w
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  PDF, 93 Kb, Archivo publicado: abr 30, 2015
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  PDF, 260 Kb, Revisión: D, Archivo publicado: jun 23, 2016
• Descargar
  CMOS Power Consumption and CPD Calculation (Rev. B)
  PDF, 89 Kb, Revisión: B, Archivo publicado: jun 1, 1997
  Reduction of power consumption makes a device more reliable. The need for devices that consume a minimum amount of power was a major driving force behind the development of CMOS technologies. As a result CMOS devices are best known for low power consumption. However for minimizing the power requirements of a board or a system simply knowing that CMOS devices may use less power than equivale
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  Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc
  PDF, 43 Kb, Archivo publicado: abr 1, 1996
  Though low power consumption is a feature of CMOS devices sometimes this feature does not meet a designer?s system power supply constraints. Therefore a partial system power down or multiple Vcc supplies are used to meet the needs of the system. This document shows electrostatic discharge protection circuits. It also provides circuit and bus driver examples of partial system power down and curren

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Clasificación del fabricante

• Semiconductors> Space & High Reliability> Logic Products> Flip-Flop/Latch/Registers