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SLPS478A – JANUARY 2014 – REVISED AUGUST 2014 CSD19501KCS 80-V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
TO-220 Plastic Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 80 V Qg Gate Charge Total (10 V) 38 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage 5.8 nC VGS = 6 V 6.2 mΩ VGS = 10 V 5.5 mΩ 2.6 V Ordering Information(1) 2 Applications UNIT VDS Secondary Side Synchronous Rectifier
Motor Control Device Package Media Qty Ship CSD19501KCS TO-220 Plastic
Package Tube 50 Tube 3 Description (1) For all available packages, see the orderable addendum at
the end of the data sheet. This 80 V, 5.5 mО©, TO-220 NexFETв„ў power
MOSFET is designed to minimize losses in power
conversion applications. TA = 25В°C Drain (Pin 2) Absolute Maximum Ratings
VALUE UNIT VDS Drain-to-Source Voltage 80 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package limited) 100 Continuous Drain Current (Silicon limited),
TC = 25В°C 129 Continuous Drain Current (Silicon limited),
TC = 100В°C 91 IDM Pulsed Drain Current (1) 305 A PD Power Dissipation 217 W TJ,
Tstg Operating Junction and …
