Datasheet Texas Instruments CSD18503Q5AT — Ficha de datos

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Design CSD18503Q5A
SLPS358C – JUNE 2012 – REVISED JUNE 2015 CSD18503Q5A 40 V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Logic Level
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5 mm × 6 mm Plastic Package TA = 25°C 40 V Qg Gate charge total (4.5 V) 13 nC Qgd Gate charge gate-to-drain RDS(on) Drain-to-source on-resistance VGS(th) Threshold voltage DEVICE 8 1 7 2 mΩ
V MEDIA 250 7-Inch Reel PACKAGE SHIP SON 5 mm Г— 6 mm
Plastic Package Tape and
Reel VALUE UNIT Drain-to-source voltage 40 V VGS Gate-to-source voltage В±20 V Continuous drain current (package limited),
TC = 25В°C 100 Continuous drain current (silicon limited), TC
= 25В°C 121 D IDM D 6 D 5 D D P0093-01 Continuous drain current, TA = 25В°C(1) 19 Pulsed drain current, TA = 25В°C(2) 321 Power dissipation(1) 3.1 Power dissipation, TC = 25В°C 120 TJ,
Tstg Operating junction,
Storage temperature EAS Avalanche energy, single pulse …