Datasheet Texas Instruments THS4631DGNRG4 — Ficha de datos

FabricanteTexas Instruments
SerieTHS4631
Numero de parteTHS4631DGNRG4
Datasheet Texas Instruments THS4631DGNRG4

Amplificador operacional de entrada FET de alta velocidad 8-MSOP-PowerPAD -40 a 85

Hojas de datos

High-Voltage High Slew Rate Wideband FET-Input Op Amp datasheet
PDF, 1.4 Mb, Revisión: B, Archivo publicado: agosto 17, 2011
Extracto del documento

Precios

Estado

Estado del ciclo de vidaActivo (Recomendado para nuevos diseños)
Disponibilidad de muestra del fabricanteNo

Embalaje

Pin8
Package TypeDGN
Industry STD TermHVSSOP
JEDEC CodeS-PDSO-G
Package QTY2500
CarrierLARGE T&R
Device MarkingADK
Width (mm)3
Length (mm)3
Thickness (mm)1.02
Pitch (mm).65
Max Height (mm)1.1
Mechanical DataDescargar

Paramétricos

2nd Harmonic76 dBc
3rd Harmonic94 dBc
@ MHz5
Acl, min spec gain1 V/V
Additional FeaturesN/A
ArchitectureFET,Voltage FB
BW @ Acl325 MHz
CMRR(Min)86 dB
CMRR(Typ)95 dB
GBW(Typ)325 MHz
Input Bias Current(Max)100 pA
Iq per channel(Max)13 mA
Iq per channel(Typ)11.5 mA
Number of Channels1
Offset Drift(Typ)2.5 uV/C
Operating Temperature Range-40 to 85 C
Output Current(Typ)95 mA
Package GroupMSOP-PowerPAD
Package Size: mm2:W x L8MSOP-PowerPAD: 15 mm2: 4.9 x 3(MSOP-PowerPAD) PKG
Rail-to-RailNo
RatingCatalog
Slew Rate(Typ)1000 V/us
Total Supply Voltage(Max)32 +5V=5, +/-5V=10
Total Supply Voltage(Min)10 +5V=5, +/-5V=10
Vn at 1kHz(Typ)7 nV/rtHz
Vn at Flatband(Typ)7 nV/rtHz
Vos (Offset Voltage @ 25C)(Max)0.5 mV

Plan ecológico

RoHSObediente

Kits de diseño y Módulos de evaluación

  • Evaluation Modules & Boards: THS4631DGNEVM
    THS4631DGNEVM Evaluation Module
    Estado del ciclo de vida: Activo (Recomendado para nuevos diseños)
  • Evaluation Modules & Boards: THS4631DDAEVM
    THS4631DDAEVM Evaluation Module
    Estado del ciclo de vida: Activo (Recomendado para nuevos diseños)

Notas de aplicación

  • Transimpedance Considerations for High-Speed Operational Amplifiers
    PDF, 193 Kb, Archivo publicado: nov 22, 2009
    Designing high-resolution detection circuits using photodiodes presents considerable challenges because bandwidth, gain, and input-referred noise are coupled together. This application note reviews the basic issues of transimpedance design, provides a set of detailed design equations, explains those equations, and develops an approach to easily compare potential solutions.
  • Transimpedance Amplifiers (TIA): Choosing the Best Amplifier for the job (Rev. A)
    PDF, 153 Kb, Revisión: A, Archivo publicado: mayo 16, 2017
    This application note is intended as a guide for the designer looking to amplify the small signal from a photodiode or avalanche diode so that it would be large enough for further processing (e.g. data acquisition) or to trigger some other event in a system. The challenge in doing so, as always, is to not degrade the signal such that it becomes indistinguishable from random noi
  • Noise Analysis for High Speed Op Amps (Rev. A)
    PDF, 256 Kb, Revisión: A, Archivo publicado: enero 17, 2005
    As system bandwidths have increased an accurate estimate of the noise contribution for each element in the signal channel has become increasingly important. Many designers are not however particularly comfortable with the calculations required to predict the total noise for an op amp or in the conversions between the different descriptions of noise. Considerable inconsistency between manufactu

Linea modelo

Clasificación del fabricante

  • Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > High-Speed Op Amps (>=50MHz)