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SLPS365A – OCTOBER 2012 – REVISED FEBRUARY 2015 CSD18504KCS 40 V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Logic Level
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
TO-220 Plastic Package TA = 25°C UNIT Drain-to-Source Voltage 40 V Qg Gate Charge Total (10 V) 19 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage 3.5 nC VGS = 4.5 V 8.0 mΩ VGS = 10 V 5.5 mΩ 1.9 V Ordering Information(1) 2 Applications TYPICAL VALUE VDS DC-DC Conversion
Secondary Side Synchronous Rectifier
Motor Control Device Package Media Qty Ship CSD18504KCS TO-220 Plastic Package Tube 50 Tube (1) For all available packages, see the orderable addendum at
the end of the data sheet. Absolute Maximum Ratings 3 Description TA = 25В°C VALUE UNIT This 40 V, 5.5 mО©, TO-220 NexFETв„ў power
MOSFET is designed to minimize losses in power
conversion applications. VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage В±20 V Continuous Drain Current (Package limited),
TC = 25В°C 100 Continuous Drain Current (Silicon limited),
TC = 25В°C 89 Continuous Drain Current (Silicon limited),
TC = 100В°C 63 IDM Pulsed Drain Current (1) 238 A PD Power Dissipation 115 W TJ, …
