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Design CSD18533KCS
SLPS362C – SEPTEMBER 2012 – REVISED JUNE 2015 CSD18533KCS 60 V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Logic Level
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
TO-220 Plastic Package TA = 25°C UNIT Drain-to-source voltage 60 V Qg Gate charge total (10 V) 28 nC Qgd Gate charge gate-to-drain 3.9 RDS(on) Drain-to-source on-resistance VGS(th) Threshold voltage nC VGS = 4.5 V 6.9 mΩ VGS = 10 V 5.0 mΩ 1.9 V Ordering Information(1) 2 Applications TYPICAL VALUE VDS DC-DC Conversion
Secondary Side Synchronous Rectifier
Motor Control DEVICE QTY MEDIA PACKAGE SHIP CSD18533KCS 50 Tube TO-220 Plastic Package Tube (1) For all available packages, see the orderable addendum at
the end of the data sheet. Absolute Maximum Ratings 3 Description TA = 25В°C VALUE UNIT This 5.0 mО©, 60 V TO-220 NexFETв„ў power
MOSFET is designed to minimize losses in power
conversion applications. VDS Drain-to-source voltage 60 V VGS Gate-to-source voltage В±20 V Continuous drain current (package limited) 100 SPACE ID Continuous drain current (silicon limited), TC
= 25В°C 118 Continuous drain current (silicon limited), TC
= 100В°C 84 IDM Pulsed drain current (1) 294 A PD Power dissipation 192 W TJ, …
