CSD17327Q5A
SLPS332 – JUNE 2011 www.ti.com 30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17327Q5A PRODUCT SUMMARY FEATURES 1 2 Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm Г— 6-mm Plastic Package VDS Drain to Source Voltage 30 V Qg Gate Charge Total (4.5V) 2.8 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
Optimized for Control FET Applications DESCRIPTION
The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications.
Top View
S 8 S 7 2 S 3 D D 6 D 5 D mΩ VGS = 8V 9.9 mΩ 1.6 Device Package Media CSD17327Q5A SON 5-mm × 6-mm
Plastic Package 13-Inch
Reel V Qty Ship 2500 Tape and
Reel Text Added For Spacing
ABSOLUTE MAXIMUM RATINGS
TA = 25В°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage +10 / -10 V Continuous Drain Current, TC = 25В°C 65 A Continuous Drain Current(1) 13 A IDM Pulsed Drain Current, TA = 25В°C(2) 85 A PD Power Dissipation(1) 3 W TJ,
TSTG Operating Junction and Storage
Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse
ID = 30A, L = 0.1mH, RG = 25Ω 45 mJ ID 1 nC …
