Product
Folder Sample &
Buy Support &
Community Tools &
Software Technical
Documents CSD19536KCS
SLPS485B – JANUARY 2014 – REVISED OCTOBER 2014 CSD19536KCS 100 V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
TO-220 Plastic Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 100 V Qg Gate Charge Total (10 V) 118 nC Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage 17 nC VGS = 6 V 2.5 mΩ VGS = 10 V 2.3 mΩ 2.5 V Ordering Information 2 Applications UNIT VDS Secondary Side Synchronous Rectifier
Motor Control Device Package Media Qty Ship CSD19536KCS TO-220 Plastic
Package Tube 50 Tube 3 Description Absolute Maximum Ratings This 100 V, 2.3 mО©, TO-220 NexFETв„ў power
MOSFET is designed to minimize losses in power
conversion applications. TA = 25В°C VALUE UNIT VDS Drain-to-Source Voltage 100 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package limited) 150 Continuous Drain Current (Silicon limited),
TC = 25В°C 259 Continuous Drain Current (Silicon limited),
TC = 100В°C 183 SPACE
Drain (Pin 2) ID Gate
(Pin 1) (1) IDM Pulsed Drain Current PD Power Dissipation TJ,
Tstg Operating Junction and …
