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SLPS459A – JANUARY 2014 – REVISED JUNE 2014 CSD25310Q2 20 V P-Channel NexFET™ Power MOSFETs
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low On Resistance
Low Thermal Resistance
Pb-Free
RoHS Compliant
Halogen Free
SON 2-mm × 2-mm Plastic Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage –20 V Qg Gate Charge Total (–4.5 V) 3.6 nC Qgd Gate Charge Gate to Drain RDS(on)
VGS(th) nC VGS = –1.8 V 59.0 mΩ VGS = –2.5 V 27.0 mΩ VGS = –4.5 V 19.9 mΩ Threshold Voltage -0.85 V .
Ordering Information(1) Battery Management
Load Management
Battery Protection 3 Description
This 19.9 mΩ, –20 V P-Channel device is designed to
deliver the lowest on resistance and gate charge in
the smallest outline possible with excellent thermal
characteristics in an ultra-low profile. Its low on
resistance coupled with an extremely small footprint …