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SLPS481B – DECEMBER 2013 – REVISED OCTOBER 2014 CSD19506KCS 80 V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
TO-220 Plastic Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 80 V Qg Gate Charge Total (10 V) 120 nC Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage 20 nC VGS = 6 V 2.2 mΩ VGS = 10 V 2.0 mΩ 2.5 V Ordering Information(1) 2 Applications UNIT VDS Secondary Side Synchronous Rectifier
Motor Control Device Package Media Qty Ship CSD19506KCS TO-220 Plastic Package Tube 50 Tube (1) For all available packages, see the orderable addendum at
the end of the data sheet. 3 Description Absolute Maximum Ratings This 80 V, 2.0 mО©, TO-220 NexFETв„ў power
MOSFET is designed to minimize losses in power
conversion applications. TA = 25В°C VALUE UNIT VDS Drain-to-Source Voltage 80 V SPACE VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package limited) 150 Continuous Drain Current (Silicon limited),
TC = 25В°C 273 Continuous Drain Current (Silicon limited),
TC = 100В°C 193 IDM Pulsed Drain Current (1) 400 A PD Power Dissipation 375 W TJ,
Tstg Operating Junction and
Storage Temperature Range –55 to 175 °C EAS Avalanche Energy, single pulse
ID = 129 A, L = 0.1 mH, RG = 25 Ω 832 mJ Drain (Pin 2) ID Gate …
