CSD17522Q5A
SLPS341A – JUNE 2011 – REVISED AUGUST 2011 www.ti.com 30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17522Q5A FEATURES 1 2 PRODUCT SUMMARY Optimized for 5V Gate Drive
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm Г— 6-mm Plastic Package Notebook Point of Load
Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems DESCRIPTION
The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications,
and optimized for 5V gate drive applications.
Figure 1. Top View
S 1 8 D S 2 7 D S 3 6 D G 4 5 D Drain to Source Voltage 30 V Qg Gate Charge Total (4.5V) 3.6 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage 1.1 nC VGS = 4.5V 10 mΩ VGS = 10V 6.7 mΩ 1.6 V ORDERING INFORMATION APPLICATIONS VDS Device Package Media CSD17522Q5A SON 5-mm × 6-mm
Plastic Package 13-Inch
Reel Qty Ship 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25В°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage В±20 V Continuous Drain Current, TC = 25В°C 87 A Continuous Drain Current(1) 16 A IDM Pulsed Drain Current, TA = 25В°C(2) 104 A PD Power Dissipation(1) 3 W TJ,
TSTG Operating Junction and Storage
Temperature Range –55 to 150 В°C EAS Avalanche Energy, single pulse …
