Datasheet Vishay VSLB3940 — Ficha de datos

VSLB3940
www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
FEATURES Package type: leaded Package form: T-1, clear epoxy Dimensions: Ш 3 mm Peak wavelength: p = 940 nm High speed High radiant power High radiant intensity
94 8636 Angle of half intensity: = ± 22° Low forward voltage Suitable for high pulse current operation Good spectral matching to Si photodetectors Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION
VSLB3940 is a high speed infrared emitting diode in GaAlAs, MQW technology, molded in a clear plastic package. APPLICATIONS Infrared remote control units Free air transmission systems Infrared source for optical counters and card readers PRODUCT SUMMARY
COMPONENT VSLB3940 Ie (mW/sr) 65 (deg) ± 22 p (nm) 940 tr (ns) 15 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION
ORDERING CODE VSLB3940 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 5000 pcs, 5000 pcs/bulk PACKAGE FORM T-1 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient t 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB tp/T = 0.1, tp = 100 s tp = 100 s TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 1 1.5 160 100 -40 to +85 -40 to +100 260 300 UNIT V mA A A mW °C °C °C °C K/W Rev. 1.5, 01-Aug-14 Document Number: 81931 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSLB3940
www.vishay.com Vishay Semiconductors
120 100 80 RthJA = 300 K/W 60 40 20 0 180 PV -Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100
21318 RthJA = 300 K/W IF -Forward Current (mA) 0 10 20 30 40 50 60 70 80 90 100 21317 Tamb -Ambient Temperature (°C) Tamb -Ambient Temperature (°C) Fig. 1 -Power Dissipation Limit vs. Ambient Temperature Fig. 2 -Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power Angle of half intensity Peak wavelength Spectral bandwidth Tempe …