Datasheet Texas Instruments UC1706L — Ficha de datos

FabricanteTexas Instruments
SerieUC1706
Numero de parteUC1706L
Datasheet Texas Instruments UC1706L

Controladores MOSFET de alta velocidad con límite de corriente 20-LCCC -55 a 125

Hojas de datos

Dual Output Driver datasheet
PDF, 750 Kb, Revisión: A, Archivo publicado: mayo 2, 2001
Extracto del documento

Precios

Estado

Estado del ciclo de vidaActivo (Recomendado para nuevos diseños)
Disponibilidad de muestra del fabricanteNo

Embalaje

Pin20
Package TypeFK
Industry STD TermLCCC
JEDEC CodeS-CQCC-N
Package QTY1
CarrierTUBE
Device MarkingUC1706L
Width (mm)8.89
Length (mm)8.89
Thickness (mm)1.83
Pitch (mm)1.27
Max Height (mm)2.03
Mechanical DataDescargar

Paramétricos

Fall Time40 ns
Input ThresholdTTL
Input VCC(Max)40 V
Input VCC(Min)5 V
Number of Channels2
Operating Temperature Range-55 to 125 C
Package GroupLCCC
Peak Output Current1.5 A
Power SwitchMOSFET
Prop Delay100 ns
RatingMilitary
Rise Time40 ns
Special FeaturesAnalog Shutdown with Latch,Inhibit Circuit,Thermal Shutdown

Plan ecológico

RoHSSee ti.com

Notas de aplicación

  • U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics
    PDF, 573 Kb, Archivo publicado: sept 5, 1999
    The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola
  • U-137 Practical Considerations in High Performance MOSFET IGBT and MCT Gate
    PDF, 244 Kb, Archivo publicado: sept 5, 1999
    The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad

Linea modelo

Clasificación del fabricante

  • Semiconductors > Space & High Reliability > Power Management Products > MOSFET and IGBT Gate Driver