Datasheet Texas Instruments TPS2812DR — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | TPS2812 |
| Numero de parte | TPS2812DR |
Controladores MOSFET duales de alta velocidad sin inversión con regulador interno 8-SOIC
Hojas de datos
Dual High-Speed MOSFET Drivers datasheet
PDF, 1.7 Mb, Revisión: F, Archivo publicado: oct 13, 2004
Extracto del documento
Precios
Estado
| Estado del ciclo de vida | Activo (Recomendado para nuevos diseños) |
| Disponibilidad de muestra del fabricante | No |
Embalaje
| Pin | 8 |
| Package Type | D |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | 2812 |
| Width (mm) | 3.91 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1.58 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.75 |
| Mechanical Data | Descargar |
Paramétricos
| Channel Input Logic | Non-Inverting |
| Fall Time | 15 ns |
| Input Threshold | CMOS |
| Input VCC(Max) | 14 V |
| Input VCC(Min) | 4 V |
| Number of Channels | 2 |
| Operating Temperature Range | -40 to 125 C |
| Package Group | SOIC |
| Peak Output Current | 2 A |
| Power Switch | MOSFET |
| Prop Delay | 25 ns |
| Rating | Catalog |
| Rise Time | 14 ns |
| Special Features | Internal Regulator |
Plan ecológico
| RoHS | Obediente |
Linea modelo
Serie: TPS2812 (8)
Clasificación del fabricante
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver