Datasheet Texas Instruments UC3709DWG4 — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | UC3709 |
| Numero de parte | UC3709DWG4 |
Invertir controladores MOSFET de alta velocidad 16-SOIC 0 a 70
Hojas de datos
UC3709 Dual High-Speed FET Driver datasheet
PDF, 548 Kb, Revisión: C, Archivo publicado: feb 27, 2008
Extracto del documento
Precios
Estado
| Estado del ciclo de vida | Activo (Recomendado para nuevos diseños) |
| Disponibilidad de muestra del fabricante | Sí |
Embalaje
| Pin | 16 |
| Package Type | DW |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 40 |
| Carrier | TUBE |
| Device Marking | UC3709DW |
| Width (mm) | 7.5 |
| Length (mm) | 10.3 |
| Thickness (mm) | 2.35 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 2.65 |
| Mechanical Data | Descargar |
Plan ecológico
| RoHS | Obediente |
Notas de aplicación
- U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching CharacteristicsPDF, 573 Kb, Archivo publicado: sept 5, 1999
The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola - U-137 Practical Considerations in High Performance MOSFET IGBT and MCT GatePDF, 244 Kb, Archivo publicado: sept 5, 1999
The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad
Linea modelo
Clasificación del fabricante
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver