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Documents CSD18535KCS
SLPS531 – MARCH 2015 CSD18535KCS 60 V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
TO-220 Plastic Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 60 V Qg Gate Charge Total (10 V) 63 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage 10.4 nC VGS = 4.5 V 2.3 mΩ VGS = 10 V 1.6 mΩ 1.9 V Ordering Information(1) 2 Applications UNIT VDS Secondary Side Synchronous Rectifier
Motor Control Device Package Media Qty Ship CSD18535KCS TO-220 Plastic Package Tube 50 Tube (1) For all available packages, see the orderable addendum at
the end of the data sheet. 3 Description Absolute Maximum Ratings This 60 V, 1.6 mО©, TO-220 NexFETв„ў power
MOSFET is designed to minimize losses in power
conversion applications. TA = 25В°C VALUE UNIT VDS Drain-to-Source Voltage 60 V SPACE VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package limited) 200 Continuous Drain Current (Silicon limited),
TC = 25В°C 279 Continuous Drain Current (Silicon limited),
TC = 100В°C 197 IDM Pulsed Drain Current (1) 400 A PD Power Dissipation 300 W TJ,
Tstg Operating Junction and
Storage Temperature Range –55 to 175 °C EAS Avalanche Energy, single pulse
ID = 111 A, L = 0.1 mH, RG = 25 Ω 616 mJ Drain (Pin 2) ID Gate …
