Datasheet Vishay SUM85N03-06P-E3 — Ficha de datos

SUM85N03-06P
Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
30 rDS(on) (W)
0.006 @ VGS = 10 V 0.009 @ VGS = 4.5 V ID (A)
85 77 D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency New Package with Low Thermal Resistance 100% Rg Tested APPLICATIONS
D TO-263 D Buck Converter -High Side -Low Side D Synchronous Rectifier -Secondary Rectifier G G D S Top View S Ordering Information: SUM85N03-06P SUM85N03-06P-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 100_C Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit
30 "20 85 67 200 45 101 100b 3.75 -55 to 175 Unit
V A mJ W _C THERMAL RESISTANCE RATINGS
Parameter
PCB Mountc Junction-to-Ambient J ti t A bi t Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 71903 S-32523-Rev. B, 08-Dec-03 www.vishay.com Free Air RthJA RthJC Symbol Limit
40 62.5 1.5 Unit _C/W C/W 1 SUM85N03-06P
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Drain Source On State Resistancea rDS(on) VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 20 A 20 0.0072 120 0.0045 0.006 0.0085 0.011 0.009 S W 30 1 3.0 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-Resistance Total Gate Chargeb Gate-Source Chargeb Gate-Drain Chargeb Turn-On Delay Timeb Rise Timeb Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W VDS = 15 V, VGS = 10 V, ID = 50 A , , 0.5 VGS = 0 V, VDS = 25 V, f = 1 MHz 3100 565 255 1.9 48 10 7.5 12 12 30 10 20 20 45 15 ns 3.1 65 nC W pF Turn-Off Delay Timeb Fall Timeb Source-Drain Diode Rati …