Datasheet Fairchild NDS7002A — Ficha de datos

November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features
High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S
TO-92
2N7000 S
(TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings
Symbol Parameter TA = 25°C unless otherwise noted
2N7000 2N7002 NDS7002A Units VDSS Drain-Source Voltage 60 60 V V V VDGR
VGSS Drain-Gate Voltage (RGS < 1 M)
Gate-Source Voltage -Continuous -Non Repetitive (tp < 50µs) ±20 ±40
200 500 400 3.2 -55 to 150 300 115 800 200 1.6 280 1500 300 2.4 -65 to 150 ID PD TJ,TSTG TL Maximum Drain Current -Continuous -Pulsed Maximum Power Dissipation Derated above 25 C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds
o mA mW mW/°C °C °C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient 312.5 625 417 °C/W © 1997 Fairchild Semiconductor Corporation 2N7000.SAM Rev. A1 Electrical Characteristics T
Symbol Parameter OFF CHARACTERISTICS A = 25°C unless otherwise noted Conditions Type Min Typ Max Units BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 10 µA VDS = 48 V, VGS = 0 V TJ=125°C VDS = 60 V, VGS = 0 V TJ=125°C All 2N7000 60 1 1 V µA mA µA mA nA nA nA nA 2N7002 NDS7002A 2N7000 2N7002 NDS7002A 2N7000 2N7002 NDS7002A 1 0.5 10 100 -10 -100 IGSSF Gate -Body Leakage, Forward VGS = 15 V, VDS = 0 V VGS = 20 V, VDS = 0 V IGSSR Gate -Body Leakage, Reverse VGS = -15 V, VDS = 0 V VGS = -20 V, VDS = 0 V ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 µA 2N7000 2N7002 NDS7002A 2N7000 0.8 1 2.1 2.1 1.2 1.9 1.8 3 2.5 5 9 5.3 7.5 13.5 7.5 13.5 2 3.5 3 5 2.5 0.4 3.75 1.5 1 0.15 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA TJ =125°C VGS = 4.5 V, ID = 75 mA VGS = 10 V, ID = 500 mA …