BSC093N04LS G OptiMOSTM3 Power-Transistor Product Summary Features VDS 40 V • Fast switching MOSFET for SMPS RDS(on),max 9.3 mW • Optimized technology for DC/DC converters ID 49 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type Package Marking BSC093N04LS G PG-TDSON-8 093N04LS Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 49 V GS=10 V, T C=100 °C 31 V GS=4.5 V, T C=25 °C 40 V GS=4.5 V,
T C=100 °C 26 V GS=10 V, T A=25 °C,
R thJA=50 K/W 2) 13 Unit
A Pulsed drain current3) I D,pulse T C=25 °C 196 Avalanche current, single pulse4) I AS T C=25 °C 40 Avalanche energy, single pulse E AS I D=40 A, R GS=25 W 10 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 Rev. 2.1 page 1 2013-05-21 BSC093N04LS G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 35 T A=25 °C, T j, T stg -55 . 150 IEC climatic category; DIN IEC 68-1
Parameter W 2.5 R thJA=50 K/W 2)
Operating and storage temperature Unit °C 55/150/56
Values Symbol Conditions Unit min. typ. max. -3.6 Thermal characteristics
Thermal resistance, junction -case R thJC bottom
top Device on PCB R thJA 6 cm2 cooling area2) K/W 20
-50 Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 40 -Gate threshold voltage V GS(th) V DS=V GS, I D=14 µA 1.2 -2 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V,
T j=25 °C -0.1 1 V DS=40 V, V GS=0 V,
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