Datasheet International Rectifier IRFH5406TRPBF — Ficha de datos

IRFH5406PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V) 60 14.4 21 1.1 40 V m nC A
PQFN 5X6 mm Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits
Features Benefits Low RDSon (< 14.4 m) Low Thermal Resistance to PCB (< 2.7°C/W) 100% Rg tested Low Profile (<0.9 mm) results in Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFH5406TRPbF IRFH5406TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Tape and Reel Tape and Reel Quantity 4000 400 Note EOL notice # 259 Absolute Maximum Ratings
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 60 ± 20 11 9 40 25 160 3.6 46 0.029 -55 to + 150 Units V A g g c W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range g Notes through are on page 9
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Static @ TJ = 25°C (unless otherwise specified)
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 60 ­­­ ­­­ 2.0 ­­­ ­­­ ­­­ ­­­ ­­­ 27 ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ Typ. ­­­ 0.07 11.4 ­­­ -8.6 ­­­ ­­­ ­­­ ­­­ ­­­ 21 3.6 1.9 …