Datasheet IRF7820PBF - International Rectifier MOSFET, N-CH, 200 V, 3.7 A, SO-8 — Ficha de datos

Descripción detallada

Manufacturer: International Rectifier

Description: MOSFET, N-CH, 200 V, 3.7 A, SO-8

Download Data Sheet

Docket:
IRF7820PbF
HEXFET® Power MOSFET
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on) at 10V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max.

Gate Rating
VDSS
RDS(on) max

Specifications:

• Continuous Drain Current Id: 3.7 A
• Drain Source Voltage Vds: 200 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 8
• On Resistance Rds(on): 0.0625 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 2.5 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• RoHS: Yes
• SVHC: No SVHC (18-Jun-2012)