Datasheet BUK9E1R6-30E - NXP MOSFET, N-CH, 30 V, 120 A, I2PAK — Ficha de datos

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Manufacturer: NXP

Description: MOSFET, N-CH, 30 V, 120 A, I2PAK

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Docket:
BUK9E1R6-30E
11 September 2012
N-channel TrenchMOS logic level FET
Product data sheet
1.

Product profile

Specifications:

• Continuous Drain Current Id: 120 A
• Drain Source Voltage Vds: 30 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 3
• On Resistance Rds(on): 1400µ Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 349 W
• Rds(on) Test Voltage Vgs: 5 V
• Threshold Voltage Vgs Typ: 1.7 V
• Transistor Case Style: TO-262
• Transistor Polarity: N Channel
• RoHS: Y-Ex
• SVHC: No SVHC (18-Jun-2012)

Otros nombres:

BUK9E1R630E, BUK9E1R6 30E