Datasheet IPP041N12N3 G - Infineon MOSFET, N-CH, 120 V, 120 A, TO220-3 — Ficha de datos

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Manufacturer: Infineon

Description: MOSFET, N-CH, 120 V, 120 A, TO220-3

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Docket:
IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G
OptiMOSTM3 Power-Transistor
Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C operating temperature · Pb-free lead plating; RoHS compliant, halogen free · Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max (TO-263) ID 120 3.8 120 V m A
· Ideal for high-frequency switching and synchronous rectification Type IPB038N12N3 G IPI041N12N3 G IPP041N12N3 G

Specifications:

• Continuous Drain Current Id: 120 A
• Drain Source Voltage Vds: 120 V
• Number of Pins: 3
• On Resistance Rds(on): 0.0035 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 300 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel
• RoHS: Yes