Datasheet IPB039N10N3 G - Infineon MOSFET, N-CH, 100 V, 160 A, TO263-7 — Ficha de datos

Infineon IPB039N10N3 G

Part Number: IPB039N10N3 G

Descripción detallada

Manufacturer: Infineon

Description: MOSFET, N-CH, 100 V, 160 A, TO263-7

Docket:
IPB039N10N3 G
"%&$!"# 3 Power-Transistor
Features P ' 3 81>>5< >? A =1<< 5E5< P G 5<5>C71C 3 81A GR 9H"[Z# @A 4D C ( & 3 < 5 75 ? 3 P.

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TM

Specifications:

Continuous Drain Current Id: 160 A
Drain Source Voltage Vds: 100 V
MSL: MSL 1 - Unlimited
Number of Pins: 7
On Resistance Rds(on): 0.0033 Ohm
Operating Temperature Range: -55°C to +175°C
Power Dissipation: 214 W
Rds(on) Test Voltage Vgs: 10 V
Threshold Voltage Vgs Typ: 2.7 V
Transistor Case Style: TO-263
Transistor Polarity: N Channel
RoHS: Yes