Datasheet IPB036N12N3 G - Infineon MOSFET, N-CH, 120 V, 180 A, TO263-7 — Ficha de datos
Part Number: IPB036N12N3 G
Descripción detallada
Manufacturer: Infineon
Description: MOSFET, N-CH, 120 V, 180 A, TO263-7
Docket:
IPB036N12N3 G
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TM
Specifications:
- Continuous Drain Current Id: 180 A
- Drain Source Voltage Vds: 120 V
- MSL: MSL 1 - Unlimited
- Number of Pins: 7
- On Resistance Rds(on): 0.0029 Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation: 300 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: TO-263
- Transistor Polarity: N Channel
- RoHS: Yes