Datasheet BSS192P L6327 - Infineon MOSFET, P-CH, 250 V, 190 mA, SOT-89 — Ficha de datos
Part Number: BSS192P L6327
Descripción detallada
Manufacturer: Infineon
Description: MOSFET, P-CH, 250 V, 190 mA, SOT-89
Docket:
BSS192P SIPMOS Small-Signal-Transistor
Feature · P-Channel · Enhancement mode · Logic Level · dv/dt rated
Product Summary VDS RDS(on) ID -250 12 -0.19
PG-SOT89
Drain pin 2 Gate pin1 Source pin 3
Specifications:
- Continuous Drain Current Id: -190 mA
- Drain Source Voltage Vds: -250 V
- MSL: MSL 1 - Unlimited
- Number of Pins: 3
- On Resistance Rds(on): 7.7 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 1 W
- Rds(on) Test Voltage Vgs: -10 V
- Threshold Voltage Vgs Typ: -1.5 V
- Transistor Case Style: SOT-89
- Transistor Polarity: P Channel
- RoHS: Yes