BSP322P SIPMOSВ® Small-Signal-Transistor Product Summary Features P-Channel Enhancement mode VDS -100 V RDS(on),max 800 mW ID -1 A Logic level Avalanche rated Pb-free lead plating; RoHS compliant PG-SOT-223 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Information Marking Lead free Packing BSP322P PG-SOT-223 H6327: 1000 pcs/reel BSP322P Yes Non dry Maximum ratings, at T j=25 В°C, unless otherwise specified
Parameter Symbol Conditions Continuous drain current ID Value T C=25 В°C 1 T C=70 В°C 0.8 Unit
A Pulsed drain current I D,pulse T C=25 В°C 4 Avalanche energy, single pulse E AS I D=-1 A, R GS=25 W 57 mJ Gate source voltage V GS В±20 V Power dissipation P tot 1.8 W Operating and storage temperature T j, T stg -55 . 150 В°C ESD Class T C=25 В°C JESD22-A114-HBM 260 В°C Soldering temperature 55/150/56 IEC climatic category; DIN IEC 68-1 Rev 1.05 1A (250V to 500V) page 1 2012-11-28 BSP322P
Parameter Values Symbol Conditions Unit min. typ. max. minimal footprint,
steady state -115 6 cm2 cooling area1),
steady state -70 Thermal characteristics
Thermal resistance,
junction -ambient R thJA K/W Electrical characteristics, at T j=25 В°C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 mA -100 -Gate threshold voltage V GS(th) V DS=V GS,I D=-380 ВµA -2.0 -1.5 -1.0 Zero gate voltage drain current I DSS V DS=-100 V, V GS=0 V,
T j=25 В°C -0.1 -1 V DS=-100 V, V GS=0 V,
T j=150 В°C -10 -100 V ВµA Gate-source leakage current I GSS V GS=-20 V, V DS=0 V -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-1 A -600 800 mW V GS=-4.5 V,
I D=-0.93 A -808 1000 0.7 1.4 -Transconductance g fs |V DS|>2|I D|R DS(on)max,
I D=-0.8 A S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 Вµm thick) copper area for drain
connection. PCB is vertical in still air. Rev 1.05 page 2 2012-11-28 BSP322P
Parameter Values Symbol Conditions Unit min. typ. max. -280 372 -70 94 Dynamic characteristics
Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss -34 51 Turn-on delay time t d(on) -4.6 6.9 Rise time tr -4.3 6.5 Turn-off delay time t d(off) -21.2 31.8 Fall time tf -8.3 12.5 Gate to source charge Q gs -0.8 1.0 Gate to drain charge Q gd -4.3 6.4 Gate charge total Qg -12.4 16.5 Gate plateau voltage V plateau -2.9 -V -1.0 A -4.0 -0.84 1.2 V -47 -ns -84 -nC V GS=0 V, V DS=-25 V,
f =1 MHz V DD=-50 V, V GS=10 V, I D=-1 A,
R G=6 W pF ns Gate Charge Characteristics2) V DD=-80 V, I D=-1 A,
V GS=0 to -10 V nC Reverse D …