Datasheet STL26NM60N - STMicroelectronics MOSFET, N CH, 600 V, 19 A, POWERFLAT — Ficha de datos

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Manufacturer: STMicroelectronics

Description: MOSFET, N CH, 600 V, 19 A, POWERFLAT

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Docket:
STL26NM60N
N-channel 600 V, 0.160 19 A PowerFLATTM 8x8 HV , ultra low gate charge MDmeshTM II Power MOSFET
Features
Order code STL26NM60N VDSS @ TJmax 650 V RDS(on) max < 0.185 ID 19 A (1)
1.

The value is rated according to Rthj-case

Specifications:

• Continuous Drain Current Id: 19 A
• Drain Source Voltage Vds: 600 V
• MSL: MSL 3 - 168 hours
• Number of Pins: 5
• On Resistance Rds(on): 0.16 Ohm
• Power Dissipation: 125 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: PowerFLAT
• Transistor Polarity: N Channel
• RoHS: Yes
• SVHC: No SVHC (19-Dec-2011)